| PART |
Description |
Maker |
| 2832179 |
SNMP-OPC agent, German and English, for integrating OPC-based automation solutions in company-wide network management systems
|
PHOENIX CONTACT
|
| 2SK246 |
Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
|
TOSHIBA
|
| S553-5006-JF S553-5999-12 S553-5999-10 |
TOKENRINGTRANSFORMERS IMPEDANCE MATCHING AND ISOLATION TRANSFORMERS DATACOM TRANSFORMER FOR TOKEN RING APPLICATION(S)
TOKENRINGTRANSFORMERS IMPEDANCE MATCHING AND ISOLATION TRANSFORMERS TOKENRINGTRANSFORMERS阻抗匹配和隔离变压器
|
Bel Fuse, Inc.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| HS2-2620RH-Q HS-2620RH HS-2622RH HS2-2622RH-Q HS7B |
Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers OP-AMP, 6000 uV OFFSET-MAX, MBCY8
Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers OP-AMP, 100 MHz BAND WIDTH, CDIP8
Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers OP-AMP, 4000 uV OFFSET-MAX, 100 MHz BAND WIDTH, CDIP8
Radiation Hardened/ Very Wideband/ High Input Impedance Uncompensated Operational Amplifiers
Radiation Hardened, Very Wideband, High
Input Impedance Uncompensated
Operational Amplifiers(抗辐射、宽带、高输入阻抗、低输入偏置电流非补偿性运算放大器)
|
Intersil, Corp.
Intersil Corporation
|
| AN202-1 AN202 |
Technical Consideration for Migrating CS5460-Based Design to CS5460A-Based Design
From old datasheet system
|
Cirrus Logic
|
| 50ZL100MEFC8X11.5 16ZL470MEFC10X12.5 16ZL470MEFC8X |
105 High ripple current, Low impedance.
MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS
105?High ripple current, Low impedance.
|
RUBYCON CORPORATION
|
| 687KXM010M 688KXM010M 227KXM010M 228KXM010M 107KXM |
105隆?C Low Impedance Radial Lead Aluminum Electrolytic Capacitors
105掳C Low Impedance Radial Lead Aluminum Electrolytic Capacitors
105°C Low Impedance Radial Lead Aluminum Electrolytic Capacitors
|
Illinois Capacitor, Inc...
|
| BVZ-925BA4 |
LED solutions
|
Bright View Electronic Co., LTD.
|
| HTC06-284-08D40 |
Thermoelectric Solutions
|
RMT Ltd.
|
| IRF7910PBF08 IRF7910PBF-15 IRF7910TRPBF |
HEXFET Power MOSFET
Ultra-Low Gate Impedance
Ultra-Low Gate Impedance
|
International Rectifier
|
| AN1826 |
TRANSIENT PROTECTION SOLUTIONS
|
STMicroelectronics
|
